China's semiconductor discrete device industry

In the past decade, China's semiconductor discrete device industry has achieved a leapfrog breakthrough, and the core secret lies in the resonance of policies, technology, market, and industrial chain. The National Development Fund and industrial policies continue to provide support, focusing on key areas such as power devices and third-generation semiconductors, guiding funds and resources towards independent and controllable concentration, and promoting rapid expansion of characteristic process production capacity. The enterprise is firmly committed to the IDM and vertical integration route, breaking through core technologies such as silicon-based MOSFETs, IGBTs, silicon carbide, gallium nitride, etc., and filling the gaps in the entire chain of materials, design, manufacturing, and packaging testing. Relying on the huge local markets of new energy vehicles, photovoltaics, energy storage, industrial control, etc., we will drive iteration through scenarios, quickly complete vehicle level verification and scale implementation, and achieve dual improvement of import substitution and global market share. The industry has shifted from low-end general to high-end customization, from following imitation to source innovation, and leading enterprises have entered the global supply chain. Through policy support, technological breakthroughs, market traction, and industrial chain synergy, China's discrete devices have risen over the past decade and become one of the most successful areas of semiconductor localization.